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Home page of Alexander P. Zhuravel | ||||||||||||||||||||||||||||
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Home | Research | Publications | LSM images | Cryogenics | My city | |||||||||||||||||||||||
Burn: 11 November, 1953 Kharkov, Ukraine |
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SURNAME : Zhuravel FIRST NAME(S): Alexander Peter |
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Education (degrees, dates, universities) Ph.D., 1990, B. Verkin Institute for Low Temperature Physics and Engineering M.S., 1977, National Aerospace University Kharkov Aviation Institute Career/Employment (employers, positions and dates) B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, Senior Researcher Scientist, from July 1994 to present B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, Research Associate, from May 1991 to July 1994 |
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Affiliation: Department of superconducting and mesoscopic structures B. Verkin Institute for Low Temperature Physics & Engineering National Academy of Sciences of Ukraine Official address: 47 Lenin Avenue 61103 Kharkov Ukraine Phone: +380-(572)-308507 Fax: +380-(572)-322370 |
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MY RESEARCH INTERESTS The main objective of my research activity is to develop a non-destructive-evaluation (NDE) laser probing method (Low-Temperature Laser Scanning Microscopy - LTLSM) for in situ spatially-resolved characterization of superconducting (SC) devices, which are currently under development or proposed for the novel high-frequency electronics. These devices are potentially capable to surpass their semi-conductor and normal (non-SC) metal counterparts and to replace them in microelectronics of the future However, despite their prospected excellent performance, a number of specific problems (of both fundamental and technological origin) remain unsolved for SC devices. Under varied external conditions their integral (averaged) characteristics are strongly dependent on microscopically distributed inhomogeneities of SC parameters and local defects. The investigation of each of these properties at high frequencies is important for finding the limiting characteristics of such SC devices. |
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Dr. Alexander P. Zhuravel zhuravel@ilt.kharkov.ua |